DS1270AB-100
IC NVSRAM 16MBIT PARALLEL 36EDIPManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Memory
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Analog Devices Inc./Maxim Integrated DS1270AB-100 is a 16Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device with a 100 ns access time. This component features a parallel interface and a 2M x 8 memory organization, enabling efficient data storage and retrieval. Designed for through-hole mounting, it is supplied in a 36-EDIP package. The operating temperature range is 0°C to 70°C (TA), with a supply voltage requirement of 4.75V to 5.25V. The write cycle time for this NVSRAM is 100 ns per word. This memory solution is suitable for applications requiring reliable data retention in industrial control systems, telecommunications equipment, and embedded systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-DIP Module (0.610"", 15.49mm) |
| Mounting Type | Through Hole |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.75V ~ 5.25V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 36-EDIP |
| Write Cycle Time - Word, Page | 100ns |
| Memory Interface | Parallel |
| Access Time | 100 ns |
| Memory Organization | 2M x 8 |
| Programmable | Not Verified |
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