DS1250Y-100IND+
IC NVSRAM 4MBIT PARALLEL 32EDIPManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Memory
Quality Control: Learn More
Analog Devices Inc./Maxim Integrated DS1250Y-100IND is a 4Mbit Non-Volatile SRAM (NVSRAM) memory component. This device features a parallel interface and a memory organization of 512K x 8, providing a total capacity of 4 Megabits. The access time is rated at 100 ns, with a corresponding write cycle time of 100 ns. Operating within a supply voltage range of 4.5V to 5.5V, this component is designed for industrial applications with an operating temperature range of -40°C to 85°C. The package is a 32-EDIP (32-DIP Module), suitable for through-hole mounting. This NVSRAM technology ensures data retention without external power, making it suitable for applications requiring persistent memory storage in industrial automation and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-DIP Module (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 32-EDIP |
| Write Cycle Time - Word, Page | 100ns |
| Memory Interface | Parallel |
| Access Time | 100 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
DS1345ABP-70+
IC NVSRAM 1MBIT PAR 34PWRCAP
DS1270Y-100
IC NVSRAM 16MBIT PARALLEL 36EDIP
DS2502S
IC EPROM 1KBIT 1-WIRE 8SOIC
