DS1245Y-120IND
IC NVSRAM 1MBIT PARALLEL 32EDIPManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Memory
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Analog Devices Inc./Maxim Integrated DS1245Y-120IND is a 1Mbit Non-Volatile SRAM (NVSRAM) memory IC with a parallel interface. This component offers a fast access time of 120 ns and a write cycle time of 120 ns for word and page operations. The memory organization is 128K x 8, providing a robust solution for data retention without external components. Designed for industrial applications, it operates within a voltage range of 4.5V to 5.5V and a temperature range of -40°C to 85°C (TA). The DS1245Y-120IND is housed in a 32-EDIP package, suitable for through-hole mounting. This NVSRAM is utilized in applications requiring persistent data storage and rapid read/write capabilities, such as industrial control systems and data logging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-DIP Module (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 32-EDIP |
| Write Cycle Time - Word, Page | 120ns |
| Memory Interface | Parallel |
| Access Time | 120 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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