DS1245Y-120
IC NVSRAM 1MBIT PARALLEL 32EDIPManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Memory
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Analog Devices Inc./Maxim Integrated DS1245Y-120 is a 1Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device featuring a parallel interface. This component offers an access time of 120 ns and a write cycle time of 120 ns, facilitating efficient data handling. The NVSRAM technology ensures data retention without external power, making it suitable for applications requiring persistent data storage. Its memory organization is 128K x 8, providing a substantial capacity for embedded systems. The DS1245Y-120 is packaged in a 32-EDIP (32-DIP Module, 0.600") for through-hole mounting. Operating within a voltage range of 4.5V to 5.5V, this device is designed for environments with ambient temperatures from 0°C to 70°C. It finds application in industrial control, data logging, and point-of-sale systems where reliable data backup is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-DIP Module (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 32-EDIP |
| Write Cycle Time - Word, Page | 120ns |
| Memory Interface | Parallel |
| Access Time | 120 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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