DS1245W-100IND+
IC NVSRAM 1MBIT PARALLEL 32EDIPManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Memory
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Analog Devices Inc./Maxim Integrated DS1245W-100IND- is a 1Mbit Non-Volatile SRAM (NVSRAM) memory integrated circuit. This component features a parallel memory interface with a memory organization of 128K x 8, providing 1Mbit of storage. It offers a fast access time of 100 ns and a write cycle time of 100 ns. Operating within a supply voltage range of 3V to 3.6V, the DS1245W-100IND- is designed for industrial applications with an operating temperature range of -40°C to 85°C. The device is housed in a 32-EDIP package, suitable for through-hole mounting. This NVSRAM technology combines the speed of SRAM with the data retention capabilities of non-volatile memory, making it suitable for applications requiring persistent data storage in industrial automation, telecommunications, and medical equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-DIP Module (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 32-EDIP |
| Write Cycle Time - Word, Page | 100ns |
| Memory Interface | Parallel |
| Access Time | 100 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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