DS1230Y-200+
IC NVSRAM 256KBIT PAR 28EDIPManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Memory
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Analog Devices Inc./Maxim Integrated DS1230Y-200- is a 256Kbit Non-Volatile SRAM (NVSRAM) memory IC. This component features a parallel interface with a data organization of 32K x 8, offering a fast access time of 200 ns. Designed for through-hole mounting, it is housed in a 28-EDIP package. The NVSRAM technology ensures data retention without external power, making it suitable for applications requiring persistent data storage in the event of power loss. This device operates within a supply voltage range of 4.5V to 5.5V and has a word/page write cycle time of 200 ns. It finds application in various industrial, consumer, and automotive systems where reliable, non-volatile data buffering is critical. The operating temperature range is 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-DIP Module (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 256Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 28-EDIP |
| Write Cycle Time - Word, Page | 200ns |
| Memory Interface | Parallel |
| Access Time | 200 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |