DS1230Y-120IND+
IC NVSRAM 256KBIT PAR 28EDIPManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Memory
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Analog Devices Inc./Maxim Integrated DS1230Y-120IND- is a 256Kbit Non-Volatile SRAM (NVSRAM) memory integrated circuit organized as 32K x 8. This component features a parallel memory interface with an access time of 120 ns and a write cycle time of 120 ns. Operating within a voltage supply range of 4.5V to 5.5V, it maintains data integrity even during power loss through its non-volatile technology. The DS1230Y-120IND- is housed in a 28-EDIP through-hole package, designed for operation in industrial temperature ranges from -40°C to 85°C. This NVSRAM is suitable for applications requiring persistent data storage and rapid read/write capabilities, commonly found in industrial automation and control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-DIP Module (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 256Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 28-EDIP |
| Write Cycle Time - Word, Page | 120ns |
| Memory Interface | Parallel |
| Access Time | 120 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |
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