DS1230AB-100
IC NVSRAM 256KBIT PAR 28EDIPManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Memory
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Analog Devices Inc./Maxim Integrated DS1230AB-100 is a 256Kbit Non-Volatile SRAM (NVSRAM) memory integrated circuit. This component features a parallel interface with a memory organization of 32K x 8 and an access time of 100 ns. The DS1230AB-100 operates from a 4.75V to 5.25V supply voltage. It is packaged in a 28-EDIP (Dual In-line Package) for through-hole mounting. The NVSRAM technology ensures data retention without external power, making it suitable for applications requiring persistent data storage in the event of power loss. This device finds utility in industrial control systems, data logging equipment, and embedded systems where reliable data integrity is paramount. The write cycle time for word and page operations is 100 ns. The operating temperature range is 0°C to 70°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-DIP Module (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 256Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.75V ~ 5.25V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 28-EDIP |
| Write Cycle Time - Word, Page | 100ns |
| Memory Interface | Parallel |
| Access Time | 100 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |
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