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MAX2602ESA

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MAX2602ESA

RF TRANS NPN 15V 1GHZ 8SOIC

Manufacturer: Analog Devices Inc./Maxim Integrated

Categories: Bipolar RF Transistors

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Analog Devices Inc./Maxim Integrated MAX2602ESA is an NPN RF transistor designed for high-frequency applications. This component features a 15V collector-emitter breakdown voltage and a 1GHz transition frequency, making it suitable for demanding RF designs. The device offers a maximum collector current of 1.2A and a minimum DC current gain (hFE) of 100 at 250mA and 3V. With a typical gain of 11.6dB and a noise figure of 3.3dB at 836MHz, the MAX2602ESA is engineered for efficient signal amplification. Its power dissipation capability is 6.4W. The transistor is housed in an 8-SOIC-EP (Exposed Pad) package, designed for surface mounting. This component is commonly utilized in wireless infrastructure, satellite communications, and test and measurement equipment. The operating temperature range extends up to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain11.6dB
Power - Max6.4W
Current - Collector (Ic) (Max)1.2A
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 250mA, 3V
Frequency - Transition1GHz
Noise Figure (dB Typ @ f)3.3dB @ 836MHz
Supplier Device Package8-SOIC-EP

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