MAX2602ESA
RF TRANS NPN 15V 1GHZ 8SOICManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Bipolar RF Transistors
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Analog Devices Inc./Maxim Integrated MAX2602ESA is an NPN RF transistor designed for high-frequency applications. This component features a 15V collector-emitter breakdown voltage and a 1GHz transition frequency, making it suitable for demanding RF designs. The device offers a maximum collector current of 1.2A and a minimum DC current gain (hFE) of 100 at 250mA and 3V. With a typical gain of 11.6dB and a noise figure of 3.3dB at 836MHz, the MAX2602ESA is engineered for efficient signal amplification. Its power dissipation capability is 6.4W. The transistor is housed in an 8-SOIC-EP (Exposed Pad) package, designed for surface mounting. This component is commonly utilized in wireless infrastructure, satellite communications, and test and measurement equipment. The operating temperature range extends up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11.6dB |
| Power - Max | 6.4W |
| Current - Collector (Ic) (Max) | 1.2A |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 250mA, 3V |
| Frequency - Transition | 1GHz |
| Noise Figure (dB Typ @ f) | 3.3dB @ 836MHz |
| Supplier Device Package | 8-SOIC-EP |