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MAX2601ESA+T

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MAX2601ESA+T

RF TRANS NPN 15V 1GHZ 8SOIC

Manufacturer: Analog Devices Inc./Maxim Integrated

Categories: Bipolar RF Transistors

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Analog Devices Inc./Maxim Integrated MAX2601ESA-T is an NPN bipolar RF transistor designed for high-frequency applications. This component operates at a transition frequency of 1GHz, with a maximum collector current of 1.2A and a collector-emitter breakdown voltage of 15V. It offers a typical gain of 11.6dB and a noise figure of 3.3dB at 836MHz. The device is rated for a maximum power dissipation of 6.4W and supports a minimum DC current gain (hFE) of 100 at 250mA and 3V. The MAX2601ESA-T features a surface mountable 8-SOIC-EP package, facilitating efficient assembly on printed circuit boards. Its operating temperature range extends up to 150°C (TJ). This transistor is suitable for use in various demanding applications, including wireless infrastructure, broadband communications, and industrial control systems. The part is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width) Exposed Pad
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain11.6dB
Power - Max6.4W
Current - Collector (Ic) (Max)1.2A
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 250mA, 3V
Frequency - Transition1GHz
Noise Figure (dB Typ @ f)3.3dB @ 836MHz
Supplier Device Package8-SOIC-EP

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