MAX2601ESA
RF TRANS NPN 15V 1GHZ 8SOICManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Bipolar RF Transistors
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Analog Devices Inc./Maxim Integrated NPN RF Transistor, part number MAX2601ESA. This device features a 15V collector-emitter breakdown voltage and a transition frequency of 1GHz. It is designed for RF applications with a maximum collector current of 1.2A and a maximum power dissipation of 6.4W. The DC current gain (hFE) is a minimum of 100 at 250mA and 3V. The noise figure is typically 3.3dB at 836MHz, with a gain of 11.6dB. This component is housed in an 8-SOIC-EP (Exposed Pad) package for surface mounting. Operating temperature can reach up to 150°C (TJ). It is commonly utilized in wireless communication systems and other high-frequency electronic designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11.6dB |
| Power - Max | 6.4W |
| Current - Collector (Ic) (Max) | 1.2A |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 250mA, 3V |
| Frequency - Transition | 1GHz |
| Noise Figure (dB Typ @ f) | 3.3dB @ 836MHz |
| Supplier Device Package | 8-SOIC-EP |