CLF1G0060S-30U
RF MOSFET GAN HEMT 50V SOT1227BManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. CLF1G0060S-30U is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for robust RF performance. This surface-mount device, packaged in SOT-1227B, operates with a drain-source voltage of 50V and a rated voltage of 150V. It delivers a 30W output power across a frequency range of 3GHz to 3.5GHz, offering a typical gain of 13dB at a test current of 70mA. This component is suitable for applications in base station infrastructure, radar systems, and other high-frequency power amplification stages. The CLF1G0060S-30U is supplied in trays for efficient handling in manufacturing environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-1227B |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3GHz ~ 3.5GHz |
| Power - Output | 30W |
| Gain | 13dB |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | SOT1227B |
| Voltage - Rated | 150 V |
| Voltage - Test | 50 V |
| Current - Test | 70 mA |
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