CLF1G0060S-10U
RF MOSFET GAN HEMT 50V SOT1227BManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. CLF1G0060S-10U is a GaN HEMT RF power transistor designed for demanding applications. This device operates within the 3GHz to 3.5GHz frequency range, delivering 10W of output power with a typical gain of 14.5dB at a 50V test voltage and 50mA test current. The CLF1G0060S-10U is housed in a SOT-1227B surface mount package, facilitating efficient board integration. Its robust Gallium Nitride High Electron Mobility Transistor technology ensures high performance and reliability in demanding RF power amplifier designs. This component is suitable for use in base station infrastructure, radar systems, and other high-frequency power applications where efficiency and linearity are critical. The device is supplied in trays.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-1227B |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3GHz ~ 3.5GHz |
| Power - Output | 10W |
| Gain | 14.5dB |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | SOT1227B |
| Voltage - Rated | 150 V |
| Voltage - Test | 50 V |
| Current - Test | 50 mA |
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