CLF1G0060-10U
RF MOSFET GAN HEMT 50V CDFM2Manufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. CLF1G0060-10U is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) RF power device. Operating within the 3GHz to 3.5GHz frequency range, this component delivers 10W of output power with a typical gain of 14.5dB at a 50mA test current and 50V test voltage. The device is housed in a CDFM2 package, conforming to the SOT-1227A footprint, and is supplied in trays. This RF MOSFET is engineered for high-performance applications in industries demanding efficient and robust RF power amplification, such as telecommunications infrastructure and radar systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-1227A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 3GHz ~ 3.5GHz |
| Power - Output | 10W |
| Gain | 14.5dB |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | CDFM2 |
| Voltage - Rated | 150 V |
| Voltage - Test | 50 V |
| Current - Test | 50 mA |
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