CLF1G0035S-200PU
RF MOSFET GAN HEMTManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. CLF1G0035S-200PU is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high-performance RF applications. This electronic component offers exceptional power handling and efficiency characteristics. Leveraging advanced GaN technology, it excels in demanding scenarios requiring robust RF performance. The CLF1G0035S-200PU is suitable for use in base station infrastructure, industrial heating, and defense systems. Its GaN HEMT architecture ensures superior linearity and high gain across a broad frequency range, making it a key enabler for next-generation wireless communication systems and other advanced RF power amplification needs. This device is supplied in Tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | - |
| Current Rating (Amps) | - |
| Frequency | - |
| Power - Output | - |
| Gain | - |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | - |
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