CLF1G0035S-100PU
RF MOSFET GAN HEMT 50V LDMOSTManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Ampleon USA Inc. CLF1G0035S-100PU is a high-performance RF power transistor utilizing Gallium Nitride High Electron Mobility Transistor (GaN HEMT) technology. This LDMOST device delivers 100W of output power at 3GHz with a typical gain of 14dB. Designed for demanding RF applications, it operates with a 50V drain-source voltage during testing and is rated for up to 150V. The SOT-1228B package facilitates efficient surface mounting for compact designs. This component is suitable for use in base station infrastructure, radar systems, and other high-frequency power amplification applications. It is supplied in trays for bulk handling and integration into automated manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-1228B |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3GHz |
| Power - Output | 100W |
| Gain | 14dB |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | LDMOST |
| Voltage - Rated | 150 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
Request a Quote
Clients Also Buy
ART35FEU
RF MOSFET LDMOS 65V SOT467C
BLF1822-10,112
RF MOSFET LDMOS 26V SOT467C
BLF6G22-45,135
RF MOSFET LDMOS 28V CDFM2
