CLF1G0035-200PU
RF MOSFET GAN HEMTManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. CLF1G0035-200PU is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for high-frequency RF power applications. This RF MOSFET utilizes advanced GaN technology for superior performance characteristics, including high power density and efficiency. It is suitable for demanding applications within the aerospace, defense, and industrial sectors where robust and efficient RF power amplification is critical. The device is supplied in Tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | - |
| Current Rating (Amps) | - |
| Frequency | - |
| Power - Output | - |
| Gain | - |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | - |
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