CLF1G0035-100,112
RF MOSFET GAN HEMT 50V SOT467CManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Ampleon USA Inc. presents the CLF1G0035-100-112, a GaN HEMT RF power transistor in a SOT-467C package. This device is rated for 50V test voltage and delivers 100W of output power at 3GHz, with a typical gain of 12dB. The CLF1G0035-100-112 is designed for high-frequency applications, exhibiting a 330mA test current. Its robust GaN HEMT technology ensures high efficiency and performance in demanding RF power amplifier designs. This component is commonly utilized in base station infrastructure, radar systems, and satellite communications. The device is supplied in a tray for efficient handling and integration into manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-467C |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 3GHz |
| Power - Output | 100W |
| Gain | 12dB |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | SOT467C |
| Voltage - Rated | 150 V |
| Voltage - Test | 50 V |
| Current - Test | 330 mA |
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