BLS6G2933P-200,117
RF MOSFET LDMOS 32V SOM038Manufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Ampleon USA Inc. BLS6G2933P-200-117 is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. This device operates within the 2.9 GHz to 3.3 GHz frequency range, delivering a typical output power of 215W at a 32V test voltage. With a gain of 11dB and characterized at 100mA test current, it is optimized for linearity and efficiency. The BLS6G2933P-200-117 features a 60V breakdown voltage and is housed in a SOM038 package suitable for chassis mounting. Its robust LDMOS technology makes it a reliable component for base station power amplification and other high-frequency communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOM038 |
| Current Rating (Amps) | 66A |
| Mounting Type | Chassis Mount |
| Frequency | 2.9GHz ~ 3.3GHz |
| Power - Output | 215W |
| Gain | 11dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | SOM038 |
| Voltage - Rated | 60 V |
| Voltage - Test | 32 V |
| Current - Test | 100 mA |
Request a Quote
Clients Also Buy
B11G2327N71DYZ
RF MOSFET LDMOS 28V 36QFN
BLF202,115
RF MOSFET 12.5V 8CSMD
BLF546
RF MOSFET 28V CDFM4
