BLP8G27-5Z
RF MOSFET LDMOS 28V 16HVSONManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. BLP8G27-5Z is an RF LDMOS power transistor designed for high-performance wireless applications. This device operates at 2.14GHz, delivering a power output of 750mW with a gain of 18dB under test conditions of 28V and 55mA. The BLP8G27-5Z features a 16-HVSON (6x4) package with an exposed pad for enhanced thermal management, suitable for surface mount applications. Its robust LDMOS technology ensures reliability and efficiency in demanding RF power amplifier designs. This component is commonly utilized in base station infrastructure and other wireless communication systems requiring high-frequency power amplification. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-VDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.14GHz |
| Power - Output | 750mW |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 16-HVSON (6x4) |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 55 mA |
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