BLP8G27-10Z
RF MOSFET LDMOS 28V 16HVSONManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. BLP8G27-10Z is a high-performance RF LDMOS transistor designed for demanding wireless infrastructure applications. This dual, common source device delivers 2W of output power at 2.14GHz with a 17dB gain, tested at 28V and 110mA. The 16-HVSON (6x4) package with an exposed pad ensures efficient thermal management for robust operation. Its LDMOS technology provides excellent linearity and ruggedness. The BLP8G27-10Z is suitable for use in base stations, power amplifiers, and other high-frequency communication systems. Packaged in Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-VDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.14GHz |
| Configuration | Dual, Common Source |
| Power - Output | 2W |
| Gain | 17dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 16-HVSON (6x4) |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 110 mA |
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