BLP8G05S-200Y
RF MOSFET LDMOS 28V 4HSOPFManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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The Ampleon USA Inc. BLP8G05S-200Y is a high-power RF LDMOS transistor designed for demanding applications. This device delivers 210W of output power at 440MHz with a typical gain of 21dB. Operating at a nominal drain voltage of 28V, it supports a rated voltage of 65V. The BLP8G05S-200Y features a dual common source configuration and is housed in a 4-HSOPF package (SOT-1138-2), suitable for surface mounting. It is supplied on tape and reel. This component is commonly utilized in base station infrastructure and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1138-2 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 440MHz |
| Configuration | Dual, Common Source |
| Power - Output | 210W |
| Gain | 21dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 4-HSOPF |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 2 mA |
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