BLP7G22-10Z
RF MOSFET LDMOS 28V 12HVSONManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. BLP7G22-10Z is a high-performance RF LDMOS transistor designed for demanding wireless applications. This dual, common source device operates at 2.14 GHz, delivering 2W of output power with a typical gain of 16dB. Tested at 28V, it features a 110mA quiescent current and is housed in a compact 12-HVSON (6x4) surface-mount package. Its robust LDMOS technology ensures efficiency and reliability in base station infrastructure, public safety communications, and other high-frequency RF power amplification systems. The component is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 12-VDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.14GHz |
| Configuration | Dual, Common Source |
| Power - Output | 2W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 12-HVSON (6x4) |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 110 mA |
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