BLP10H660PY
RF MOSFET LDMOS 50V 4HSOPFManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Ampleon USA Inc. BLP10H660PY is an RF LDMOS power transistor designed for high-power applications. This 50V device offers a typical power output of 60W at 1GHz, with a specified gain of 18dB under test conditions. It features a 4-HSOPF package, commonly known as SOT-1223-2, and is supplied in Tape & Reel (TR) packaging. The BLP10H660PY is suitable for demanding RF power amplifier designs across various industries, including telecommunications infrastructure and industrial heating systems. Its LDMOS technology ensures robust performance and efficiency for critical signal amplification tasks.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1223-2 |
| Current Rating (Amps) | 1.4µA |
| Frequency | 1GHz |
| Power - Output | 60W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 4-HSOPF |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 40 mA |
Request a Quote
Clients Also Buy
ART35FEU
RF MOSFET LDMOS 65V SOT467C
BLF1822-10,112
RF MOSFET LDMOS 26V SOT467C
BLF6G22-45,135
RF MOSFET LDMOS 28V CDFM2
