BLP10H6120PGY
RF MOSFET LDMOS 50V 4HSOPManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. BLP10H6120PGY is a 120W LDMOS RF power transistor designed for high-frequency applications. This device operates at 1GHz with a typical gain of 18dB and a test voltage of 50V. It is rated for a drain-source voltage of 110V and a continuous drain current of 80mA at 1GHz. The BLP10H6120PGY features a 4-HSOP package, suitable for surface mounting. Its robust LDMOS technology makes it a reliable component for demanding applications in wireless infrastructure and broadcast systems. The device is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-BESOP (0.173"", 4.40mm Width) |
| Current Rating (Amps) | 1.4µA |
| Mounting Type | Surface Mount |
| Frequency | 1GHz |
| Power - Output | 120W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 4-HSOP |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 80 mA |
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