BLD6G21LS-50,112
RF MOSFET LDMOS 28V CDFM4Manufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. BLD6G21LS-50-112 is a high-performance RF power transistor utilizing LDMOS technology. This device is designed for demanding applications in cellular infrastructure and point-to-point communication systems. Featuring a 65V breakdown voltage and optimized for operation at 2.02GHz, it delivers 8W of output power with a typical gain of 14.5dB at 28V and 170mA test conditions. The BLD6G21LS-50-112 is housed in a CDFM4 package (SOT-1130B) for efficient surface mounting. Its dual, common source configuration ensures robust performance in challenging RF environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-1130B |
| Current Rating (Amps) | 10.2A |
| Mounting Type | Surface Mount |
| Frequency | 2.02GHz |
| Configuration | Dual, Common Source |
| Power - Output | 8W |
| Gain | 14.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | CDFM4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 170 mA |
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