BLA6H0912L-1000U
RF FET LDMOS 100V 15.5DB SOT539AManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. BLA6H0912L-1000U is a high-power LDMOS RF power transistor designed for demanding applications. This device operates at 1.03 GHz, delivering a typical output power of 1000W with a gain of 15.5dB under specified test conditions. The transistor features a 100V breakdown voltage and is rated for a 50V test voltage with a 200mA test current. It is housed in a SOT-539A package, suitable for chassis mounting. The BLA6H0912L-1000U is engineered for robust performance in base station infrastructure, industrial heating, and broadcast transmitter systems. Its dual, common source configuration enhances its suitability for high-power RF amplification stages.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-539A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.03GHz |
| Configuration | Dual, Common Source |
| Power - Output | 1000W |
| Gain | 15.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | SOT539A |
| Voltage - Rated | 100 V |
| Voltage - Test | 50 V |
| Current - Test | 200 mA |
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