B11G3338N80DX
RF MOSFET LDMOS 36QFNManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. B11G3338N80DX is an RF LDMOS power transistor designed for high-frequency applications. This device operates across the 3.3GHz to 3.8GHz spectrum, offering a substantial 38dB of gain. The transistor is housed in a 36-PQFN (12x7) exposed pad package, suitable for surface mount applications with its Tape & Reel (TR) packaging. Featuring a 65V rating, this component is engineered for demanding RF power amplification tasks. Its specifications make it suitable for use in telecommunications infrastructure, radar systems, and other high-power RF applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 36-QFN Exposed Pad |
| Current Rating (Amps) | 1.4µA |
| Mounting Type | Surface Mount |
| Frequency | 3.3GHz ~ 3.8GHz |
| Configuration | - |
| Power - Output | - |
| Gain | 38dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 36-PQFN (12x7) |
| Voltage - Rated | 65 V |
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