B11G2327N70DYZ
RF MOSFET LDMOS 36QFNManufacturer: Ampleon USA Inc.
Categories: RF FETs, MOSFETs
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Ampleon USA Inc. B11G2327N70DYZ is a high-performance RF LDMOS transistor designed for operation within the 2.3 GHz to 2.7 GHz frequency range. This device offers a typical gain of 30.3 dB, making it suitable for demanding RF power amplification applications. The B11G2327N70DYZ features a 65 V breakdown voltage and is housed in a 36-PQFN (12x7) exposed pad package, facilitating efficient surface mounting and thermal management. Its LDMOS technology ensures robustness and linearity critical for telecommunications infrastructure, radar systems, and industrial heating applications. Packaged on tape and reel, this component is optimized for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 36-QFN Exposed Pad |
| Current Rating (Amps) | 1.4µA |
| Mounting Type | Surface Mount |
| Frequency | 2.3GHz ~ 2.7GHz |
| Configuration | Dual |
| Power - Output | - |
| Gain | 30.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 36-PQFN (12x7) |
| Voltage - Rated | 65 V |
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