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MX0912B251Y,114

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MX0912B251Y,114

RF TRANS NPN 20V 1.215GHZ CDFM2

Manufacturer: Ampleon USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

Ampleon USA Inc. NPN RF Transistor, part number MX0912B251Y-114. This high-power RF power transistor is designed for demanding applications, operating at a transition frequency of 1.215GHz with a collector current capability of 15A. It offers a maximum power output of 690W, making it suitable for robust RF power amplification. The device features a 20V collector-emitter breakdown voltage and a typical gain of 7.4dB. Engineered for chassis mounting, it utilizes the CDFM2 package, also known as SOT-439A. This component is typically employed in base station infrastructure and other high-frequency power amplifier designs. The operating junction temperature is rated up to 200°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseSOT-439A
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain7.4dB
Power - Max690W
Current - Collector (Ic) (Max)15A
Voltage - Collector Emitter Breakdown (Max)20V
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition1.215GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageCDFM2

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