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BLW96/01,112

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BLW96/01,112

RF TRANS NPN 55V 235MHZ CRFM4

Manufacturer: Ampleon USA Inc.

Categories: Bipolar RF Transistors

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Ampleon USA Inc. NPN RF Power Transistor, part number BLW96-01-112. This robust NPN bipolar RF transistor is designed for high-power applications, featuring a 55V collector-emitter breakdown voltage and a maximum collector current of 12A. With a transition frequency of 235MHz and a maximum power dissipation of 340W, it is suitable for demanding RF power amplifier designs. The device offers a minimum DC current gain (hFE) of 15 at 7A, 5V, and operates reliably at junction temperatures up to 200°C. Its SOT-121B package, specified as CRFM4 by the supplier, allows for efficient chassis mounting. This component is commonly utilized in professional mobile radio, broadcast, and industrial heating applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseSOT-121B
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain-
Power - Max340W
Current - Collector (Ic) (Max)12A
Voltage - Collector Emitter Breakdown (Max)55V
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 7A, 5V
Frequency - Transition235MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageCRFM4

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