AOTF10B65M2
IGBT 650V 10A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single IGBTs
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Alpha & Omega Semiconductor Inc. Alpha IGBT™ AOTF10B65M2 is a 650 V, 20 A insulated gate bipolar transistor (IGBT) designed for high-efficiency power conversion. This through-hole component, housed in a TO-220-3 package, offers a maximum collector current of 20 A and a pulsed collector current of 30 A. Key performance parameters include a Vce(on) of 2V at 15V/10A, a gate charge of 24 nC, and switching energies of 180µJ (on) and 130µJ (off) under a test condition of 400V, 10A, 30 Ohm, 15V. The device operates across a temperature range of -55°C to 150°C and is supplied in tube packaging. Typical applications include power supplies, motor drives, and industrial power systems.
Additional Information
Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 262 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 10A |
| Supplier Device Package | TO-220 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 12ns/91ns |
| Switching Energy | 180µJ (on), 130µJ (off) |
| Test Condition | 400V, 10A, 30Ohm, 15V |
| Gate Charge | 24 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 30 W |
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