AOTF10B65M1
IGBT 650V 10A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single IGBTs
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Alpha & Omega Semiconductor Inc. Alpha IGBT™ AOTF10B65M1 is a 650V, 20A Insulated Gate Bipolar Transistor. This TO-220 packaged device features a low Vce(on) of 2V at 15V Vge and 10A Ic. With a pulsed collector current of 30A and a maximum power dissipation of 30W, it is suitable for demanding power conversion applications. Key switching characteristics include a gate charge of 24 nC and switching energies of 180µJ (on) and 130µJ (off) at 400V, 10A, 30 Ohm, 15V. The device operates across a temperature range of -55°C to 150°C and is supplied in a TO-220-3 package. This component is commonly utilized in power supplies and industrial motor control systems.
Additional Information
Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 263 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 10A |
| Supplier Device Package | TO-220 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 12ns/91ns |
| Switching Energy | 180µJ (on), 130µJ (off) |
| Test Condition | 400V, 10A, 30Ohm, 15V |
| Gate Charge | 24 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 30 W |
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