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AOTF10B65M1

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AOTF10B65M1

IGBT 650V 10A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single IGBTs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. Alpha IGBT™ AOTF10B65M1 is a 650V, 20A Insulated Gate Bipolar Transistor. This TO-220 packaged device features a low Vce(on) of 2V at 15V Vge and 10A Ic. With a pulsed collector current of 30A and a maximum power dissipation of 30W, it is suitable for demanding power conversion applications. Key switching characteristics include a gate charge of 24 nC and switching energies of 180µJ (on) and 130µJ (off) at 400V, 10A, 30 Ohm, 15V. The device operates across a temperature range of -55°C to 150°C and is supplied in a TO-220-3 package. This component is commonly utilized in power supplies and industrial motor control systems.

Additional Information

Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)263 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 10A
Supplier Device PackageTO-220
IGBT Type-
Td (on/off) @ 25°C12ns/91ns
Switching Energy180µJ (on), 130µJ (off)
Test Condition400V, 10A, 30Ohm, 15V
Gate Charge24 nC
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)30 A
Power - Max30 W

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