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AOTF10B60D2

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AOTF10B60D2

IGBT 600V 10A TO-220F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single IGBTs

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Alpha & Omega Semiconductor Inc. Alpha IGBT™ AOTF10B60D2 is a 600V insulated gate bipolar transistor (IGBT) designed for demanding applications. This device features a continuous collector current of 23A and a pulsed collector current of 20A, with a maximum power dissipation of 31.2W. Key electrical characteristics include a gate charge of 9.4 nC and a Vce(on) of 1.8V at 15V Vge and 5A Ic. The switching characteristics are defined by an on-time of 12ns and an off-time of 83ns at 25°C, with switching energy of 140µJ (on) and 40µJ (off) under test conditions of 400V and 5A. The AOTF10B60D2 utilizes a standard input type and is provided in a TO-220F package for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in industrial and power conversion systems.

Additional Information

Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)98 ns
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 5A
Supplier Device PackageTO-220F
IGBT Type-
Td (on/off) @ 25°C12ns/83ns
Switching Energy140µJ (on), 40µJ (off)
Test Condition400V, 5A, 60Ohm, 15V
Gate Charge9.4 nC
Current - Collector (Ic) (Max)23 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)20 A
Power - Max31.2 W

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