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AOT15B60D

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AOT15B60D

IGBT 600V 30A 167W TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single IGBTs

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Alpha & Omega Semiconductor Inc. Alpha IGBT™ AOT15B60D is a 600 V, 30 A insulated gate bipolar transistor (IGBT) designed for high-efficiency power conversion. This through-hole component features a maximum collector current of 30 A, with a pulsed capability of 60 A. The device exhibits a low collector-emitter saturation voltage (Vce(on)) of 1.8 V at 15 V gate-emitter voltage and 15 A collector current. Key switching characteristics include a typical turn-on delay (Td(on)) of 21 ns and turn-off delay (Td(off)) of 73 ns at 25°C, with switching energies of 420 µJ (on) and 110 µJ (off). The AOT15B60D is rated for a maximum power dissipation of 167 W and operates across a temperature range of -55°C to 175°C. It is commonly utilized in industrial applications such as power supplies, motor control, and renewable energy systems. The component is supplied in TO-220-3 packaging.

Additional Information

Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)196 ns
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 15A
Supplier Device PackageTO-220
IGBT Type-
Td (on/off) @ 25°C21ns/73ns
Switching Energy420µJ (on), 110µJ (off)
Test Condition400V, 15A, 20Ohm, 15V
Gate Charge25.4 nC
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)60 A
Power - Max167 W

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