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AOT10B65MQ2

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AOT10B65MQ2

IGBT 10A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single IGBTs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaIGBT™ AOT10B65MQ2 is a 650V Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This through-hole TO-220 packaged device offers a continuous collector current of 20A and a pulsed collector current of 30A, with a maximum power dissipation of 150W. Key electrical characteristics include a gate charge of 24 nC and a low on-state voltage (Vce(on)) of 2V at 15V Vge and 10A Ic. Switching performance is highlighted by a typical turn-on delay (Td(on)) of 12ns and a turn-off delay (Td(off)) of 91ns at 25°C, with a switching energy of 180µJ (on) and 130µJ (off) under the specified test conditions. The device operates across a wide temperature range of -55°C to 175°C. This component is commonly utilized in industrial power supplies, motor control, and solar inverters.

Additional Information

Series: AlphaIGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)106 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 10A
Supplier Device PackageTO-220
IGBT Type-
Td (on/off) @ 25°C12ns/91ns
Switching Energy180µJ (on), 130µJ (off)
Test Condition400V, 10A, 30Ohm, 15V
Gate Charge24 nC
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)30 A
Power - Max150 W

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