AOT10B65M1
IGBT 650V 10A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single IGBTs
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Alpha & Omega Semiconductor Inc. Alpha IGBT™ AOT10B65M1 is a 650V, 20A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 150W. This device features a low collector-emitter saturation voltage of 2V at 15V gate-emitter voltage and 10A collector current. The AOT10B65M1 exhibits a typical gate charge of 24 nC and switching energies of 180µJ (on) and 130µJ (off) under the test condition of 400V, 10A, 30 Ohm, 15V. It is housed in a TO-220-3 package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. Applications include power factor correction, motor control, and uninterruptible power supplies.
Additional Information
Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 262 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 10A |
| Supplier Device Package | TO-220 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 12ns/91ns |
| Switching Energy | 180µJ (on), 130µJ (off) |
| Test Condition | 400V, 10A, 30Ohm, 15V |
| Gate Charge | 24 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 150 W |
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