AOT10B60M1
IGBT 10AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single IGBTs
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Alpha & Omega Semiconductor Inc. AlphaIGBT™ AOT10B60M1 is a 600V Insulated Gate Bipolar Transistor (IGBT) suitable for high-efficiency power conversion applications. This through-hole TO-220 packaged device features a continuous collector current of 20A and a pulsed current capability of 25A. With a maximum power dissipation of 83W, it maintains a low on-state voltage of 2.9V at 10A and 15V gate drive. Key switching characteristics include a gate charge of 14nC and switching energies of 190µJ (on) and 140µJ (off) under test conditions of 400V, 10A, 30 Ohms, and 15V. The operating temperature range extends from -55°C to 175°C. This component is widely utilized in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: AlphaIGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 10A |
| Supplier Device Package | TO-220 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 5.5ns/61ns |
| Switching Energy | 190µJ (on), 140µJ (off) |
| Test Condition | 400V, 10A, 30Ohm, 15V |
| Gate Charge | 14 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 25 A |
| Power - Max | 83 W |