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AOT10B60D

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AOT10B60D

IGBT 600V 20A 163W TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single IGBTs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. Alpha IGBT™ series AOT10B60D is a 600V, 20A Insulated Gate Bipolar Transistor designed for high-efficiency power conversion. This TO-220 packaged device features a maximum continuous collector current of 20A and a pulsed capability of 40A. With a low on-state voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 10A collector current, it minimizes conduction losses. The AOT10B60D exhibits a gate charge of 17.4 nC and switching energies of 260µJ (on) and 70µJ (off) under test conditions of 400V, 10A, 30 Ohm, and 15V gate drive. Its robust construction supports a maximum power dissipation of 163W and operates across a wide temperature range of -55°C to 175°C. This component is suitable for applications in industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)105 ns
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 10A
Supplier Device PackageTO-220
IGBT Type-
Td (on/off) @ 25°C10ns/72ns
Switching Energy260µJ (on), 70µJ (off)
Test Condition400V, 10A, 30Ohm, 15V
Gate Charge17.4 nC
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)40 A
Power - Max163 W

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