AOKS40B65H1
IGBT 650V 40A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single IGBTs
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Alpha & Omega Semiconductor Inc. Alpha IGBT™ AOKS40B65H1 is a high-performance insulated-gate bipolar transistor designed for demanding applications. This component offers a 650V collector-emitter breakdown voltage and a continuous collector current rating of 80A, with a pulsed capability of 120A. The device features a maximum power dissipation of 300W and a low on-state voltage of 2.4V at 15V gate-source voltage and 40A collector current. Switching characteristics include typical turn-on and turn-off times of 41ns and 130ns respectively, with corresponding switching energies of 1.27mJ (on) and 460µJ (off) under specified test conditions. The AOKS40B65H1 utilizes a standard input type and is housed in a TO-247-3 package for through-hole mounting, operating across a temperature range of -55°C to 175°C. This device is suitable for use in power conversion systems, industrial motor drives, and renewable energy applications.
Additional Information
Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 41ns/130ns |
| Switching Energy | 1.27mJ (on), 460µJ (off) |
| Test Condition | 400V, 40A, 7.5Ohm, 15V |
| Gate Charge | 63 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 300 W |
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