AOK40B65H2AL
IGBT 650V 40A TO-247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single IGBTs
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Alpha & Omega Semiconductor Inc. presents the Alpha IGBT™ series AOK40B65H2AL, a high-performance insulated-gate bipolar transistor. This component features a 650V collector-emitter breakdown voltage and a continuous collector current rating of 80A, with a pulsed capability of 120A. Designed for robust operation, it offers a maximum power dissipation of 260W and a low on-state voltage of 2.6V at 15V gate-emitter voltage and 40A collector current. The AOK40B65H2AL exhibits switching characteristics with turn-on delay (Td(on)) of 30ns and turn-off delay (Td(off)) of 117ns at 25°C, along with switching energy values of 1.17mJ (on) and 540µJ (off). Reverse recovery time (trr) is specified at 315ns. Packaged in a TO-247-3 through-hole configuration, this device is suitable for demanding applications across industrial power supplies, motor drives, and renewable energy systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 315 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/117ns |
| Switching Energy | 1.17mJ (on), 540µJ (off) |
| Test Condition | 600V, 40A, 7.5Ohm, 15V |
| Gate Charge | 61 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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