AOK20B120E2
IGBT 1200V 20A TO-247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single IGBTs
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The Alpha & Omega Semiconductor Inc. Alpha IGBT™ AOK20B120E2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a collector-emitter voltage (Vce) breakdown of 1200 V and a continuous collector current (Ic) capability of 40 A, with a pulsed current (Icm) rating of 80 A. The device offers a maximum power dissipation of 250 W and a low on-state voltage (Vce(on)) of 2.2V at 15V gate-emitter voltage and 20A collector current. With a typical gate charge of 53.5 nC and a switching energy of 820µJ (off) under specified test conditions (600V, 20A, 15Ohm, 15V), this IGBT is suitable for power conversion systems. The Alpha IGBT™ AOK20B120E2 is housed in a TO-247-3 package, designed for through-hole mounting, and operates within an ambient temperature range of -55°C to 175°C (TJ). This component is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/123ns |
| Switching Energy | 820µJ (off) |
| Test Condition | 600V, 20A, 15Ohm, 15V |
| Gate Charge | 53.5 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 250 W |
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