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AOD5B65N1

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AOD5B65N1

IGBT 650V 5A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single IGBTs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. Alpha IGBT™ AOD5B65N1 is a 650V N-channel Power MOSFET designed for demanding applications. This device features a 10A continuous collector current (Ic) and a 15A pulsed collector current (Icm), with a maximum power dissipation of 52W. The low on-state voltage (Vce(on)) of 2.5V at 15V gate-source voltage and 5A collector current contributes to efficient operation. Switching characteristics include a gate charge of 9.2 nC, with typical turn-on delay (Td(on)) of 8ns and turn-off delay (Td(off)) of 73ns at 25°C. Switching energy is rated at 81µJ (on) and 49µJ (off) under test conditions of 400V, 5A, 60O, and 15V. The AOD5B65N1 is housed in a TO-252-3, DPAK surface-mount package and operates across a wide temperature range of -55°C to 150°C (TJ). This component is suitable for use in power supply, motor control, and industrial applications.

Additional Information

Series: Alpha IGBT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)170 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 5A
Supplier Device PackageTO-252 (DPAK)
IGBT Type-
Td (on/off) @ 25°C8ns/73ns
Switching Energy81µJ (on), 49µJ (off)
Test Condition400V, 5A, 60Ohm, 15V
Gate Charge9.2 nC
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)15 A
Power - Max52 W

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