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AOY526

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AOY526

MOSFET N-CH 30V 18A/50A TO251B

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AOY526, an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source voltage and offers a continuous drain current of 18A at ambient temperature and 50A at case temperature. With a low on-resistance of 5mOhm at 20A and 10V, the AOY526 minimizes conduction losses. It supports a wide gate drive voltage range from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a typical input capacitance (Ciss) of 1550 pF at 15V and a gate charge (Qg) of 33 nC at 10V. The device is housed in a TO-251B (IPAK) package, suitable for through-hole mounting, and operates across an extended temperature range of -55°C to 175°C. Power dissipation capabilities are 2.5W at ambient and 50W at case temperature. This MOSFET is utilized in industries such as automotive and industrial power management.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageTO-251B
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1550 pF @ 15 V

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