AOY2N60
MOSFET N-CH 600V 2A TO251Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOY2N60. This device features a 600V drain-to-source voltage and a continuous drain current of 2A at 25°C (Tc). The AOY2N60 offers a maximum Rds(on) of 4.7 Ohms at 1A and 10V, with a gate threshold voltage of 4.5V (max) at 250µA. It has a typical input capacitance (Ciss) of 295 pF at 25V and a gate charge (Qg) of 11 nC at 10V. With a maximum power dissipation of 57W (Tc), this MOSFET is housed in a TO-251B package with through-hole mounting. The operating temperature range is -50°C to 150°C (TJ). This component is commonly utilized in power supply applications and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V |
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