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AOWF7S60

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AOWF7S60

MOSFET N-CH 600V 7A TO262F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. aMOS™ AOWF7S60 is a 600V N-Channel power MOSFET designed for high-efficiency applications. This device features a continuous drain current rating of 7A at 25°C (Tc) with a maximum power dissipation of 25W (Tc). Its low on-resistance of 600mOhm is achieved at 3.5A and 10V Vgs. Key parameters include a Drain-to-Source Voltage (Vdss) of 600V, a gate charge (Qg) of 8.2 nC at 10V, and input capacitance (Ciss) of 372 pF at 100V. The AOWF7S60 utilizes MOSFET technology and is packaged in a TO-262F (TO-262-3 Long Leads, I2PAK, TO-262AA) for through-hole mounting. This component is suitable for use in power supply units, industrial motor control, and lighting applications.

Additional Information

Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-262F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds372 pF @ 100 V

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