AOWF600A70F
MOSFET N-CH 700V 8.5A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS5™ series AOWF600A70F is a 700V N-Channel MOSFET designed for high-efficiency power conversion applications. This through-hole component features a continuous drain current of 8.5A (Tj) and a maximum power dissipation of 25W (Tc). The AOWF600A70F offers a low on-resistance of 600mOhm at 2.5A and 10V gate-source voltage, with a typical gate charge of 14.5 nC. Its input capacitance (Ciss) is rated at 900 pF at 100V. The device is housed in a TO-262F package, suitable for industrial applications requiring robust thermal performance and reliable switching characteristics. Operating temperature range is -55°C to 150°C.
Additional Information
Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tj) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
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