AOWF600A70
MOSFET N-CH 700V 8.5A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS5™ N-Channel Power MOSFET, part number AOWF600A70, offers a 700V drain-source breakdown voltage with a continuous drain current of 8.5A at 25°C. This through-hole component, packaged in a TO-262F configuration, features a maximum on-resistance of 600mOhm at 2.5A and 10V Vgs. Key parameters include a gate charge of 15.5 nC and input capacitance of 870 pF at 100V. With a maximum power dissipation of 25W at 25°C case temperature and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tj) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
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