AOWF600A60
MOSFET N-CH 600V 8A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS5™ N-Channel Power MOSFET, part number AOWF600A60, offers 600V drain-source breakdown voltage with a continuous drain current of 8A at 25°C. This TO-262F packaged device features a maximum power dissipation of 23W at case temperature and a low on-resistance of 600mOhm at 2.1A and 10V gate drive. Key parameters include a gate charge of 11.5nC at 10V and input capacitance of 608pF at 100V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply, industrial motor control, and lighting.
Additional Information
Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tj) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 608 pF @ 100 V |
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