AOWF4S60
MOSFET N-CH 600V 4A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ AOWF4S60 is a 600V N-Channel Power MOSFET featuring a continuous drain current capability of 4A at 25°C. This component is housed in a TO-262F package, suitable for through-hole mounting. Key electrical characteristics include a maximum Rds(On) of 900mOhm at 2A and 10V, with a gate charge (Qg) of 6nC at 10V. Input capacitance (Ciss) is rated at 263pF maximum at 100V. The device offers a power dissipation of 25W at 25°C. This MOSFET is utilized in applications requiring robust high-voltage switching capabilities, including power supplies, lighting, and motor control. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 263 pF @ 100 V |
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